HGTG20N60B3 Description
The HGTG20N60B3 is a high-voltage switching device that combines the greatest qualities of MOSFETs and bipolar transistors in a Generation III MOS gated device. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25°C and 150°C, the significantly smaller on-state voltage loss fluctuates relatively modestly. Many high-voltage switching applications with moderate frequencies and low conduction losses, such as AC and DC motor controllers, power supplies, and drivers for solenoids, relays, and contactors, benefit from the IGBT.
HGTG20N60B3 Features
HGTG20N60B3 Applications
Other Industrial
Power management
Motor drive & control
