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FGL60N100BNTD

FGL60N100BNTD

FGL60N100BNTD

ON Semiconductor

FGL60N100BNTD datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGL60N100BNTD Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code8541.29.00.95
Voltage - Rated DC 1kV
Max Power Dissipation180W
Current Rating60A
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation180W
Input Type Standard
Transistor Application POWER CONTROL
Rise Time320ns
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 60A
Reverse Recovery Time 1.2 μs
Collector Emitter Breakdown Voltage600V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Saturation Voltage1.5V
Max Breakdown Voltage 1kV
Turn On Time460 ns
Test Condition 600V, 60A, 51 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 760 ns
IGBT Type NPT and Trench
Gate Charge275nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 140ns/630ns
Height 26mm
Length 20mm
Width 5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1730 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$8.781977$8.781977
10$8.284884$82.84884
100$7.815928$781.5928
500$7.373517$3686.7585
1000$6.956148$6956.148

FGL60N100BNTD Product Details

FGL60N100BNTD Description


FGL60N100BNTD 1000V NPT IGBT features ON Semiconductor's proprietary trench design and advanced NPT technology to provide excellent turn-on and switching performance, high avalanche durability, and easy parallel operation. This device provides optimum performance for hard switching applications such as UPS and welding machines.



FGL60N100BNTD Features


  • High-speed switch

  • Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60A

  • High input impedance

  • Built-in fast recovery diode



FGL60N100BNTD Applications


  • UPS

  • Other industries


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