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FGL60N100BNTDTU

FGL60N100BNTDTU

FGL60N100BNTDTU

ON Semiconductor

FGL60N100BNTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGL60N100BNTDTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 6.756g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Voltage - Rated DC 1kV
Max Power Dissipation180W
Current Rating60A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation180W
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 60A
Reverse Recovery Time 1.2 μs
Collector Emitter Breakdown Voltage1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Saturation Voltage1.5V
Turn On Time460 ns
Test Condition 600V, 60A, 51 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
Turn Off Time-Nom (toff) 760 ns
IGBT Type NPT and Trench
Gate Charge275nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 140ns/630ns
Height 26mm
Length 20mm
Width 5mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1908 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.960600$6.9606
10$6.566604$65.66604
100$6.194909$619.4909
500$5.844254$2922.127
1000$5.513447$5513.447

FGL60N100BNTDTU Product Details

FGL60N100BNTDTU Description

Using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
FGL60N100BNTDTU Features

● High Speed Switching
● Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
● High Input Impedance
● Built-in Fast Recovery Diode
● ROHS3 Compliant
● Lead Free
FGL60N100BNTDTU Applications

● UPS
● Welder
● New Energy Vehicle
● Photovoltaic & Wind Power Generation
● Smart Grid

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