Name: IRGSL4062DPBF
Brand: Infineon Technologies
SKU: IRGSL4062DPBF
Price: 2.37000 USD
Availability: InStock

new-10%

IRGSL4062DPBF

Manufacturer part number:IRGSL4062DPBF

Manufacturer:Infineon Technologies

Description:IRGSL4062DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGSL4062DPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	250W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.95V
Max Collector Current	48A
Reverse Recovery Time	89 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.95V
Turn On Time	64 ns
Test Condition	400V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 24A
Turn Off Time-Nom (toff)	164 ns
IGBT Type	Trench
Gate Charge	50nC
Current - Collector Pulsed (Icm)	96A
Td (on/off) @ 25°C	41ns/104ns
Switching Energy	115μJ (on), 600μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	41ns
Height	9.65mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant

IRGSL4062DPBF Product Details

IRGSL4062DPBF Description

IRGSL4062DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGSL4062DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

IRGSL4062DPBF Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

IRGSL4062DPBF Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display