IRG4BC30F-STRL Description
IRG4BC30F-STRL is a 600V insulated gate bipolar transistor. The IRG4BC30F-STRL is optimized for specified application conditions. The Infineon insulated gate bipolar transistor IRG4BC30F-STRL is designed to be a "drop-in" replacement for equivalent industry-standard generation 3 IR IGBTs. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4BC30F-STRL is in the TO-220AB package with 100W power dissipation.
IRG4BC30F-STRL Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
Industry-standard TO-220AB package
Continuous Collector Current IC @ TC = 25°C: 31A
Gate-to-Emitter Voltage: ±20V
IRG4BC30F-STRL Applications
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
