STGFW30V60F Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimumcompromise between conduction and switching losses to maximize the efficiencyof very high frequency converters. Furthermore, the positive VCE(sat) temperaturecoefficient and very tight parameter distribution result in safer paralleling operation.
STGFW30V60F Features
? Maximum junction temperature: TJ = 175 °C
? Tail-less switching off
? VCE(sat) = 1.85 V (typ.) @ IC = 30 A
? Tight parameter distribution
? Safe paralleling
? Low thermal resistance
STGFW30V60F Applications
? Photovoltaic inverters
? Uninterruptible power supply
? Welding
? Power factor correction
? Very high frequency converters
