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IRG7PH35UD1-EP

IRG7PH35UD1-EP

IRG7PH35UD1-EP

Infineon Technologies

IRG7PH35UD1-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG7PH35UD1-EP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2012
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN OVER NICKEL
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation179W
Peak Reflow Temperature (Cel) 250
[email protected] Reflow Temperature-Max (s) 30
Base Part Number IRG7PH35
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Power - Max 179W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 50A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage1.2kV
Test Condition 600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 20A
Turn Off Time-Nom (toff) 400 ns
IGBT Type Trench
Gate Charge130nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C -/160ns
Switching Energy 620μJ (off)
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 105ns
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:3520 items

IRG7PH35UD1-EP Product Details

IRG7PH35UD1-EP Features

Low VCE (ON) trench IGBT Technology

Low Switching Losses

Square RBSOA

Ultra-Low VF Diode

1300Vpk Repetitive Transient Capacity

100% of the Parts Tested for ILM

Positive VCE (ON) Temperature Co-Efficient

Tight Parameter Distribution

Lead-Free Package



IRG7PH35UD1-EP Benefits

Device optimized for induction heating and soft switching applications

High Efficiency due to Low VCE(on), low switching losses, and Ultra-low VF

Rugged transient performance for increased reliability

Excellent current sharing in parallel operation

Low EMI


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