FGA30N120FTDTU Description
Known for its high efficiency and quick switching, the Insulated Gate Bipolar Transistor, or IGBT, is a three-terminal power semiconductor device. The IGBT combines an isolated gate FET for the control input and a bipolar power transistor as a switch in a single component, combining the straightforward gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage performance of bipolar transistors.
FGA30N120FTDTU Features
Switching Energy: 55μJ (on), 85μJ (off)
Turn Off Time-Nom (toff): 242 ns
Test Condition: 390V, 3A, 10 Ω, 15V
Collector Emitter Voltage (VCEO): 600V
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
FGA30N120FTDTU Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
