IRG4P254SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4P254SPBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Supplier Device Package
TO-247AC
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
250V
Max Power Dissipation
200W
Current Rating
98A
Element Configuration
Single
Power Dissipation
200W
Input Type
Standard
Power - Max
200W
Rise Time
44ns
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
98A
Collector Emitter Breakdown Voltage
250V
Voltage - Collector Emitter Breakdown (Max)
250V
Current - Collector (Ic) (Max)
98A
Collector Emitter Saturation Voltage
1.5V
Test Condition
200V, 55A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic
1.5V @ 15V, 55A
Gate Charge
200nC
Current - Collector Pulsed (Icm)
196A
Td (on/off) @ 25°C
40ns/270ns
Switching Energy
380μJ (on), 3.5mJ (off)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:1991 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.018664
$2.018664
10
$1.904400
$19.044
100
$1.796604
$179.6604
500
$1.694909
$847.4545
1000
$1.598971
$1598.971
IRG4P254SPBF Product Details
IRG4P254SPBF Description
IRG4P254SPBF is an N-channel single IGBT transistor from the manufacturer Infineon Technologies with the breakdown voltage of 250V. The operating temperature of the IRG4P254SPBF is -55°C~150°C TJ and its maximum power dissipation is 200W. IRG4P254SPBF has 3 pins and it is available in Bulk packaging way. The Collector Emitter Voltage (VCEO) of IRG4P254SPBF is 1.5V.
IRG4P254SPBF Features
Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
IRG4P254SPBF Applications
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
High Power density
Lower conduction losses than similarly rated MOSFET
Lower Gate Charge than equivalent MOSFET
Simple Gate Drive characteristics compared to Thyristors
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