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IRGP4078DPBF

IRGP4078DPBF

IRGP4078DPBF

Infineon Technologies

IRGP4078DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGP4078DPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2013
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation278W
Element ConfigurationSingle
Input Type Standard
Power - Max 278W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 74A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage1.9V
Test Condition 400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 50A
IGBT Type Trench
Gate Charge92nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C -/116ns
Switching Energy 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 20.7mm
Length 15.87mm
Width 5.31mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
In-Stock:4142 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.501000$5.501
10$5.189623$51.89623
100$4.895870$489.587
500$4.618746$2309.373
1000$4.357307$4357.307

IRGP4078DPBF Product Details

IRGP4078DPBF Description


IRGP4078DPBF is a 600v n-channel insulated gate bipolar transistor with an ultra-low VF diode for induction heating and soft switching applications. The Infineon IRGP4078DPBF provides high efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor IRGP4078DPBF is in the TO-247AC package with 278 power dissipation.



IRGP4078DPBF Features


Low VcE (ON) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175°C.

5 μs short circuit SOA

Square RBSOA

100% of the parts tested for LLM

Positive VcE (ON) Temperature coefficient

Ultra-low VF Hyperfast Diode

Tight parameter distribution



IRGP4078DPBF Applications


Communications equipment

Datacom module

Industrial

Building automation

Enterprise systems

Datacenter & enterprise computing


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