NGB8206N Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary use includes Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
NGB8206N Features
Ideal for Coil?on?Plug and Driver?on?Coil Applications
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp LimitsStress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE)
Pb?Free Packages are Available
NGB8206N Applications
Ignition Systems
