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STGB19NC60WT4

STGB19NC60WT4

STGB19NC60WT4

STMicroelectronics

STGB19NC60WT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

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STGB19NC60WT4 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation130W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Base Part Number STGB19
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Power - Max 130W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Collector Emitter Breakdown Voltage600V
Max Breakdown Voltage 600V
Turn On Time33 ns
Test Condition 390V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 12A
Turn Off Time-Nom (toff) 204 ns
Gate Charge53nC
Td (on/off) @ 25°C 25ns/90ns
Switching Energy 81μJ (on), 125μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1527 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$15.080000$15.08
10$14.226415$142.26415
100$13.421146$1342.1146
500$12.661459$6330.7295
1000$11.944772$11944.772

STGB19NC60WT4 Product Details

STGB19NC60WT4 Description


STGB19NC60WT4 is a 600v ultra fast IGBT. This IGBT STGB19NC60WT4 utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior. The STGB19NC60WT4 can be applied in High-frequency motor controls, inverters, UPS, HF, SMPS, and PFC in both hard switch and resonant topologies. The Operating and Storage Temperature Range is between -65 and 150℃. And the transistor STGB19NC60WT4 is in the D2PAK package with 130W power dissipation.



STGB19NC60WT4 Features


High-frequency operation

Low CRES / CIEs ratio (no cross-conduction susceptibility)

Collector-emitter voltage (VGE = 0): 600v

Collector current (continuous) at TC = 25°C: 40A

Turn-off latching current: 30A



STGB19NC60WT4 Applications


High-frequency motor control

Inverters

UPS

HF

SMPS

PFC in both hard switch and resonant topologies


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