STGP5H60DF Description
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the H series of IGBTs, which represents anoptimum compromise between conduction and switching losses to maximize theefficiency of high switching frequency converters. Furthermore, a slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.
STGP5H60DF Features
? High-speed switching
? Tight parameter distribution
? Safe paralleling
? Low thermal resistance
? Short-circuit rated
? Ultrafast soft recovery antiparallel diode
STGP5H60DF Applications
? Motor control
? UPS
? PFC
