STGW40V60DLF Description
An IGBT called the STGW40V60DLF was created employing a cutting-edge, proprietary trench gate field stop construction. The component is a part of the V series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high-frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and very narrow parameter distribution.
STGW40V60DLF Features
Safe paralleling
Tail-less switching off
Low thermal resistance
Tight parameters distribution
VCE(sat)= 1.8 V (typ.) @ IC= 40 A
Designed for soft commutation only
Low VFsoft recovery co-packaged diode
Maximum junction temperature: TJ= 175 °C
STGW40V60DLF Applications
Industrial
Personal electronics
Communications equipment
