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NGD8205NT4

NGD8205NT4

NGD8205NT4

ON Semiconductor

NGD8205NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGD8205NT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 350V
Max Power Dissipation125W
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating20A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number NGD8205N
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Rise Time-Max 8000ns
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation125W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 20A
Collector Emitter Breakdown Voltage390V
Turn On Time6500 ns
Test Condition 300V, 9A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A
Turn Off Time-Nom (toff) 18500 ns
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C -/5μs
Gate-Emitter Voltage-Max 15V
Gate-Emitter Thr Voltage-Max 2.1V
Fall Time-Max (tf) 14000ns
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:7326 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.428160$4.42816
10$4.177509$41.77509
100$3.941047$394.1047
500$3.717969$1858.9845
1000$3.507517$3507.517

NGD8205NT4 Product Details

NGD8205NT4 Description


The NGD8205NT4 is an Ignition IGBT with 20 Amp, 350 Volt, N?Channel DPAK. For usage in inductive coil driver applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need high voltage and high current switching are some of the most common usage.



NGD8205NT4 Features


  • Low Threshold Voltage for Interfacing Power Loads to Logic or

  • Microprocessor Devices

  • Low Saturation Voltage

  • High Pulsed Current Capability

  • Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE)

  • These are Pb?Free Devices

  • Ideal for Coil?on?Plug and Driver?on?Coil Applications

  • DPAK Package Offers Smaller Footprint for Increased Board Space

  • Gate?Emitter ESD Protection

  • Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

  • Integrated ESD Diode Protection



NGD8205NT4 Applications


  • Ignition Systems

  • Direct Fuel Injection

  • High Voltage and High Current Switching

  • Solar Inverters

  • AC and DC Motor Drives


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