STGW20H65FB Description
STGW20H65FB, a part of the new HB series of IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high frequency converters. Safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution.
STGW20H65FB Features
Advanced proprietary trench gate field-stop structure
PositiveVCE(sat) temperature coefficient
Very tight parameter distribution
Low thermal resistance
STGW20H65FB Applications
Photovoltaic inverters
Power factor correction
Welding
High-frequency converters
