2N3055 Description
The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor that is housed in a Jedec TO-3 metal casing. Power switching circuits, series and shunt regulators, output stages, and high fidelity amplifiers are among the applications for the 2N3055 transistor. MJ2955 is the complementary PNP type.
2N3055 Features
The excellent safe operating area
The low collector-emitter saturation voltage
Medium power transistor
Pb?free packages are available
DC current gain (hFE) up to 70
With hfe improved linearity
Complementary NPN - PNP transistors
The maximum voltage across collector and emitter: 60V DC
Maximum current allowed through collector: 15A DC
The maximum voltage across base and emitter: 7V DC
Maximum current allowed through base: 7A DC
The maximum voltage across collector and base: 100V DC
Operating temperature range: -65oC to +200oC
Total power dissipation: 115W
2N3055 Applications
PWM applications
Regulator circuits
Power switching circuits
Amplifier circuits
Switch-mode power supply
Signal Amplifiers
