MJD42CT4G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 15 @ 3A 4V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 600mA, 6A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -6A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.During maximum operation, collector current can be as low as 6A volts.
MJD42CT4G Features
the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz
MJD42CT4G Applications
There are a lot of ON Semiconductor MJD42CT4G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
