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2N6667

2N6667

2N6667

Rochester Electronics, LLC

POWER BIPOLAR PNP TRANSISTOR

SOT-23

2N6667 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-65°C~150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 10A
RoHS StatusNon-RoHS Compliant
In-Stock:5509 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.56000$1.56
500$1.5444$772.2
1000$1.5288$1528.8
1500$1.5132$2269.8
2000$1.4976$2995.2
2500$1.482$3705

About 2N6667

The 2N6667 from Rochester Electronics, LLC is a high-performance microcontroller designed for a wide range of embedded applications. This component features POWER BIPOLAR PNP TRANSISTOR.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N6667, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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