2SAR542PT100 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.240MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
2SAR542PT100 Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 400mV @ 35mA, 700mA
the emitter base voltage is kept at -6V
a transition frequency of 240MHz
2SAR542PT100 Applications
There are a lot of ROHM Semiconductor 2SAR542PT100 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
