QSX1TR Overview
DC current gain in this device equals 270 @ 500mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 60mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 6A volts.
QSX1TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 200mV @ 60mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
QSX1TR Applications
There are a lot of ROHM Semiconductor QSX1TR applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
