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2SB1202T-E

2SB1202T-E

2SB1202T-E

ON Semiconductor

2SB1202T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SB1202T-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface MountNO
Number of Pins 3
Operating Temperature150°C TJ
PackagingBulk
Published 2000
JESD-609 Code e6
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory Other Transistors
Max Power Dissipation1W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number 2SB1202
Pin Count3
Configuration Single
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 100mA, 2A
Collector Emitter Breakdown Voltage50V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 150MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -6V
hFE Min 100
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:36659 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.250439$1.250439
10$1.179659$11.79659
100$1.112886$111.2886
500$1.049892$524.946
1000$0.990465$990.465

2SB1202T-E Product Details

2SB1202T-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Collector current can be as low as 5A volts at its maximum.

2SB1202T-E Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V

2SB1202T-E Applications


There are a lot of ON Semiconductor 2SB1202T-E applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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