2SCR514PT100 Overview
In this device, the DC current gain is 120 @ 100mA 3V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 15mA, 300mA.A constant collector voltage of 700mA is necessary for high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.There is a transition frequency of 320MHz in the part.Single BJT transistor can take a breakdown input voltage of 80V volts.A maximum collector current of 700mA volts can be achieved.
2SCR514PT100 Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 300mV @ 15mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 320MHz
2SCR514PT100 Applications
There are a lot of ROHM Semiconductor 2SCR514PT100 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
