2SA2210-1E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 350mA, 7A.Emitter base voltages of -6V can achieve high levels of efficiency.The part has a transition frequency of 140MHz.Collector current can be as low as 20A volts at its maximum.
2SA2210-1E Features
the DC current gain for this device is 150 @ 1A 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 350mA, 7A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz
2SA2210-1E Applications
There are a lot of ON Semiconductor 2SA2210-1E applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
