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2N6426RLRA

2N6426RLRA

2N6426RLRA

ON Semiconductor

2N6426RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N6426RLRA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating500mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6426
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 125MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 12V
Continuous Collector Current 500mA
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:139415 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.06000$0.06
500$0.0594$29.7
1000$0.0588$58.8
1500$0.0582$87.3
2000$0.0576$115.2
2500$0.057$142.5

2N6426RLRA Product Details

2N6426RLRA Overview


This device has a DC current gain of 30000 @ 100mA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.Emitter base voltages of 12V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).In this part, there is a transition frequency of 125MHz.When collector current reaches its maximum, it can reach 500mA volts.

2N6426RLRA Features


the DC current gain for this device is 30000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz

2N6426RLRA Applications


There are a lot of ON Semiconductor 2N6426RLRA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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