2SB1689T106 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -110mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 25mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).There is a transition frequency of 400MHz in the part.Input voltage breakdown is available at 12V volts.The maximum collector current is 1.5A volts.
2SB1689T106 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 200mV @ 25mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1.5A
a transition frequency of 400MHz
2SB1689T106 Applications
There are a lot of ROHM Semiconductor 2SB1689T106 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
