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BSP60H6327XTSA1

BSP60H6327XTSA1

BSP60H6327XTSA1

Rochester Electronics, LLC

BSP60H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BSP60H6327XTSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 200MHz
RoHS StatusROHS3 Compliant
In-Stock:40437 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.20000$0.2
500$0.198$99
1000$0.196$196
1500$0.194$291
2000$0.192$384
2500$0.19$475

BSP60H6327XTSA1 Product Details

BSP60H6327XTSA1 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This product comes in a PG-SOT223-4 device package from the supplier.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BSP60H6327XTSA1 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the supplier device package of PG-SOT223-4

BSP60H6327XTSA1 Applications


There are a lot of Rochester Electronics, LLC BSP60H6327XTSA1 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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