PBSS5220T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 225mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.100MHz is present in the transition frequency.There is a breakdown input voltage of 20V volts that it can take.A maximum collector current of 2A volts can be achieved.
PBSS5220T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 225mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5220T,215 Applications
There are a lot of Nexperia USA Inc. PBSS5220T,215 applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
