SMMBTA06LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 4V to achieve high efficiency.As you can see, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
SMMBTA06LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
a transition frequency of 100MHz
SMMBTA06LT3G Applications
There are a lot of ON Semiconductor SMMBTA06LT3G applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
