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PN2222ATA

PN2222ATA

PN2222ATA

ON Semiconductor

PN2222ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PN2222ATA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation625mW
Terminal Position BOTTOM
Current Rating1A
Frequency 300MHz
Base Part Number PN2222
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application SWITCHING
Gain Bandwidth Product300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage1V
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Turn Off Time-Max (toff) 285ns
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19232 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.140640$0.14064
10$0.132679$1.32679
100$0.125169$12.5169
500$0.118084$59.042
1000$0.111400$111.4

PN2222ATA Product Details

PN2222ATA Overview


In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 300MHz in the part.The breakdown input voltage is 25V volts.Collector current can be as low as 1A volts at its maximum.

PN2222ATA Features


the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz

PN2222ATA Applications


There are a lot of ON Semiconductor PN2222ATA applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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