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2N6043G

2N6043G

2N6043G

ON Semiconductor

2N6043G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N6043G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation75W
Peak Reflow Temperature (Cel) 260
Current Rating8A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6043
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A 4V
Current - Collector Cutoff (Max) 20μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 16mA, 4A
Collector Emitter Breakdown Voltage60V
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7067 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.80000$0.8
50$0.66360$33.18
100$0.54490$54.49
500$0.43450$217.25

2N6043G Product Details

2N6043G Overview


In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 16mA, 4A.Continuous collector voltage should be kept at 8A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Collector current can be as low as 8A volts at its maximum.

2N6043G Features


the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

2N6043G Applications


There are a lot of ON Semiconductor 2N6043G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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