NSV1C200MZ4T1G Overview
This device has a DC current gain of 120 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -220mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.There is a transition frequency of 120MHz in the part.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
NSV1C200MZ4T1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz
NSV1C200MZ4T1G Applications
There are a lot of ON Semiconductor NSV1C200MZ4T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
