2SAR523UBTL Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.The collector emitter saturation voltage is -150mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 5mA, 50mA.A constant collector voltage of -100mA is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A transition frequency of 300MHz is present in the part.The breakdown input voltage is 50V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2SAR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523UBTL Applications
There are a lot of ROHM Semiconductor 2SAR523UBTL applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
