BC857CWT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -650mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 45V volts.A maximum collector current of 100mA volts is possible.
BC857CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC857CWT1G Applications
There are a lot of ON Semiconductor BC857CWT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
