KSA1381ESTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 10mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at -5V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.As a result, the part has a transition frequency of 150MHz.There is a 300V maximal voltage in the device due to collector-emitter breakdown.The maximum collector current is -100mA volts.
KSA1381ESTU Features
the DC current gain for this device is 100 @ 10mA 10V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 2mA, 20mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz
KSA1381ESTU Applications
There are a lot of ON Semiconductor KSA1381ESTU applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
