NSS12500UW3T2G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2A 2V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.A VCE saturation (Max) of 260mV @ 400mA, 4A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.Parts of this part have transition frequencies of 100MHz.An input voltage of 12V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
NSS12500UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 260mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz
NSS12500UW3T2G Applications
There are a lot of ON Semiconductor NSS12500UW3T2G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
