2SB1709TL Overview
A collector emitter saturation voltage of -85mV allows maximum design flexibility.For high efficiency, the continuous collector voltage must be kept at -1.5A.An emitter's base voltage can be kept at -6V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.400MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 12V volts.Collector current can be as low as 1.5A volts at its maximum.
2SB1709TL Features
a collector emitter saturation voltage of -85mV
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 400MHz
2SB1709TL Applications
There are a lot of ROHM Semiconductor 2SB1709TL applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver