2SA1163-GR,LF Overview
In this device, the DC current gain is 200 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor can be broken down at a voltage of 120V volts.In extreme cases, the collector current can be as low as 100mA volts.
2SA1163-GR,LF Features
the DC current gain for this device is 200 @ 2mA 6V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at 5V
2SA1163-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1163-GR,LF applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
