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TIP115TU

TIP115TU

TIP115TU

Rochester Electronics, LLC

TIP115TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

TIP115TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 2A
RoHS StatusROHS3 Compliant
In-Stock:21461 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.42000$0.42
500$0.4158$207.9
1000$0.4116$411.6
1500$0.4074$611.1
2000$0.4032$806.4
2500$0.399$997.5

TIP115TU Product Details

TIP115TU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1A 4V DC current gain.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Product comes in TO-220-3 supplier package.The device has a 60V maximal voltage - Collector Emitter Breakdown.

TIP115TU Features


the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the supplier device package of TO-220-3

TIP115TU Applications


There are a lot of Rochester Electronics, LLC TIP115TU applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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