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FZT600BTA

FZT600BTA

FZT600BTA

Diodes Incorporated

FZT600BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT600BTA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 140V
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT600
Pin Count4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 500mA 10V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 10mA, 1A
Collector Emitter Breakdown Voltage140V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage1.2V
Max Breakdown Voltage 140V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 10V
Height 1.65mm
Length 6.55mm
Width 3.55mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:11751 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.090960$0.09096
500$0.066882$33.441
1000$0.055735$55.735
2000$0.051133$102.266
5000$0.047788$238.94
10000$0.044454$444.54
15000$0.042992$644.88
50000$0.042274$2113.7

FZT600BTA Product Details

FZT600BTA Overview


In this device, the DC current gain is 10000 @ 500mA 10V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 1.2V, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.2V @ 10mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 250MHz.Single BJT transistor can take a breakdown input voltage of 140V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

FZT600BTA Features


the DC current gain for this device is 10000 @ 500mA 10V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 10mA, 1A
the emitter base voltage is kept at 10V
the current rating of this device is 2A
a transition frequency of 250MHz

FZT600BTA Applications


There are a lot of Diodes Incorporated FZT600BTA applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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