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TIP47G

TIP47G

TIP47G

ON Semiconductor

TIP47G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP47G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 250V
Max Power Dissipation40W
Peak Reflow Temperature (Cel) 260
Current Rating1A
Frequency 10MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP47
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation40W
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Gain Bandwidth Product10MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 300mA 10V
Current - Collector Cutoff (Max) 1mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 1A
Collector Emitter Breakdown Voltage250V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage1V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 15.75mm
Length 10.28mm
Width 4.82mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5903 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.73000$0.73
50$0.60020$30.01
100$0.49270$49.27
500$0.39288$196.44

TIP47G Product Details

TIP47G Overview


This device has a DC current gain of 30 @ 300mA 10V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.A VCE saturation (Max) of 1V @ 200mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.This device has a current rating of 1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 10MHz.A maximum collector current of 1A volts is possible.

TIP47G Features


the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz

TIP47G Applications


There are a lot of ON Semiconductor TIP47G applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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