PN3644 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 15mA, 150mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -300mA.The product comes in the supplier device package of TO-92-3.Device displays Collector Emitter Breakdown (45V maximal voltage).The maximum collector current is 800mA volts.
PN3644 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -300mA
the supplier device package of TO-92-3
PN3644 Applications
There are a lot of ON Semiconductor PN3644 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
