SBC847CWT3G Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.As a result, the part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
SBC847CWT3G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847CWT3G Applications
There are a lot of ON Semiconductor SBC847CWT3G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
