BD180G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 800mV.A VCE saturation (Max) of 800mV @ 100mA, 1A means Ic has reached its maximum value(saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of -3A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.Maximum collector currents can be below 1A volts.
BD180G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 3MHz
BD180G Applications
There are a lot of ON Semiconductor BD180G applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
