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BC817-16LT1

BC817-16LT1

BC817-16LT1

Rochester Electronics, LLC

BC817-16LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BC817-16LT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count3
Power - Max 300mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 100MHz
RoHS StatusNon-RoHS Compliant
In-Stock:382993 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.02000$0.02
500$0.0198$9.9
1000$0.0196$19.6
1500$0.0194$29.1
2000$0.0192$38.4
2500$0.019$47.5

BC817-16LT1 Product Details

BC817-16LT1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.The device exhibits a collector-emitter breakdown at 45V.

BC817-16LT1 Features


the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC817-16LT1 Applications


There are a lot of Rochester Electronics, LLC BC817-16LT1 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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