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BC807-25LZ

BC807-25LZ

BC807-25LZ

Nexperia USA Inc.

BC807-25LZ datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BC807-25LZ Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2018
Series Automotive, AEC-Q101
Part StatusActive
Power - Max 250mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 80MHz
RoHS StatusROHS3 Compliant
In-Stock:406784 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.160000$0.16
10$0.150943$1.50943
100$0.142399$14.2399
500$0.134339$67.1695
1000$0.126735$126.735

BC807-25LZ Product Details

BC807-25LZ Overview


In this device, the DC current gain is 160 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).The device exhibits a collector-emitter breakdown at 45V.

BC807-25LZ Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA

BC807-25LZ Applications


There are a lot of Nexperia USA Inc. BC807-25LZ applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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