BC817-25LT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 100MHz.Breakdown input voltage is 45V volts.Collector current can be as low as 500mA volts at its maximum.
BC817-25LT3G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-25LT3G Applications
There are a lot of ON Semiconductor BC817-25LT3G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
