SST3906T116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.A VCE saturation (Max) of 400mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at -200mA for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.In the part, the transition frequency is 250MHz.As a result, it can handle voltages as low as 40V volts.During maximum operation, collector current can be as low as 200mA volts.
SST3906T116 Features
the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 250MHz
SST3906T116 Applications
There are a lot of ROHM Semiconductor SST3906T116 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
