BCP5516H6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Collector current can be as low as 1A volts at its maximum.
BCP5516H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP5516H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP5516H6327XTSA1 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
