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2SA1576U3T106R

2SA1576U3T106R

2SA1576U3T106R

ROHM Semiconductor

2SA1576U3T106R datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1576U3T106R Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 140MHz
RoHS StatusROHS3 Compliant
In-Stock:28415 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.027192$0.027192
500$0.019994$9.997
1000$0.016662$16.662
2000$0.015285$30.57
5000$0.014286$71.43
10000$0.013289$132.89
15000$0.012852$192.78
50000$0.012638$631.9

2SA1576U3T106R Product Details

2SA1576U3T106R Overview


DC current gain in this device equals 120 @ 1mA 6V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2SA1576U3T106R Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA

2SA1576U3T106R Applications


There are a lot of ROHM Semiconductor 2SA1576U3T106R applications of single BJT transistors.

  • Inverter
  • Muting
  • Driver
  • Interface

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